BAV99_SER All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 3 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
5. Limiting values
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj
=25°C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5] Soldering points at pins 2, 3, 5 and 6.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse
voltage
-100V
VR
reverse voltage - 100 V
IF
forward current
BAV99
[1]
-215mA
[2]
-125mA
BAV99S
[1]
-200mA
BAV99W
[1]
-150mA
[2]
-130mA
IFRM
repetitive peak forward
current
-500mA
IFSM
non-repetitive peak
forward current
square wave
[3]
tp
=1μs-4A
tp
=1ms - 1 A
tp
=1s - 0.5 A
Ptot
total power dissipation
[1][4]
BAV99 Tamb
≤
25
°C-250mW
BAV99S Tsp
≤
85
°C
[5]
-250mW
BAV99W Tamb
≤
25
°C-200mW
Per device
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?65 +150
°C
Tstg
storage temperature
?65 +150
°C
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